Ultralong-lived spins in silicon carbide
Abstract: Optically active spin defects in the solid-state are key for applications in quantum information science, quantum sensing, and quantum networks. In particular, the neutral divacancy (VV0) defect in silicon carbide can be leveraged for these applications because it boasts long coherence times, a robust spin-photon interface, and the added benefit of being hosted in a technologically mature semiconductor. Additionally, nuclear spins inherent in the material provide a key resource for local quantum memories due to their long coherence times. In this talk, we demonstrate that in isotopically purified material, VV0 qubits display record-long coherence times of individual electron and nuclear spins, single-shot readout of the electron and nuclear spin states, and in-situ device tunability of the electron’s optical and spin properties. Ultimately, these findings harness the synergy between materials growth and device integration to create a highly coherent solid-state quantum node.
Bio: Dr. Cyrus Zeledon is a recent PhD graduate of the Quantum Science and Engineering department at the University of Chicago in Prof. David Awschalom’s group. He studied optically active, isolated, single intrinsic defects in doped structures of silicon carbide that bear a spin and are promising for quantum information science. Previously, he also worked with oxide materials for spintronic applications.
To watch online go to the IQUIST youtube channel: https://www.youtube.com/channel/UCCzAySwQXF8J4kRolUzg2ww