Electrical and Computer Engineering Seminar
Hyunseok Kim, Postdoctorial Associate
Massachusetts Institute of Technology (MIT)
December 5, 2022, 10:00-11:00am, B02 CSL Auditorum
Heterogeneous integration technologies for next-generation electronics and optoelectronics
Abstract: Heterogeneous integration of functional materials offers new pathways for advanced device platforms and functional systems. In this talk, I will introduce heterogeneous integration technologies that I have been developing for electronic and optoelectronic device platforms.
I will first present new concepts of epitaxy and layer transfer methods, which enable the production of freestanding single-crystal membranes. The freestanding III-V, III-N, and group IV membranes can be used as building blocks for hetero-integrated device structures that were not achievable by conventional methods. 2D materials involved in the process are the key enabler for such epitaxy and layer transfer, and I will discuss novel physical phenomena in these 3D/2D heterostructures.
Next, I will introduce exciting opportunities toward new concepts of devices that can be achieved by these hetero-integration approaches. As the first example, I will show full-color microLEDs with the world’s highest pixel density fabricated by vertical integration of red, green, and blue layers. Secondly, I will introduce wearable electronic skin (e-skin) devices capable of multi-modal sensing and wireless communication based on ultrathin GaN surface acoustic wave (SAW) devices. Lastly, I will discuss future prospects of these technologies.
Bio: Hyunseok Kim is currently a postdoctoral associate at Massachusetts Institute of Technology (MIT). He has a broad research background in electronic/optoelectronic/photonic devices, III-V/III-N and low-dimensional materials, and integrated device platforms. As a postdoc in Jeehwan Kim group at MIT, he is leading multiple projects on epitaxy-on-2D-materials and hetero-integration technologies, which enabled new (opto)electronic devices and computing chips. Before joining MIT, he received his B.S. and M.S. in Electrical Engineering from Seoul National University, and Ph.D. in Electrical and Computer Engineering from UCLA. During his Ph.D. study in Diana Huffaker group at UCLA, he developed III-V nanophotonic devices including monolithic III-V nanolasers on Si, quantum emitters, and single photon detectors. He published more than 40 peer-reviewed articles (19 first-authored) in journals including Science, Nature, Nature nanotechnology, and Nature electronics.