“Engineering optically addressable spin defects for quantum applications”
Optically addressable point-defects in wide band gap semiconductors, such as the NV center in diamond and divacancy complexes in silicon carbide, offer a versatile platform for applications related to quantum technology. These localized point defects are intrinsically sensitive to their local crystallographic, charge, and nuclear spin environment, and understanding the intricate interplay between quantum defects and their material hosts is a critical step toward improving spin coherence, charge stability, and optical properties. Moreover, defect creation through ion implantation inherently causes damage to the local crystal structure, further motivating the need to understand lattice deformations at the nanoscale. I will present work on developing methods to create, measure, manipulate, and localize coherent spins in diamond using growth synthesis methods. I will discuss recent advances in synthesizing low-dimensionality (nano-scale particles and membranes) defect hosts for deterministic integration with other classical or quantum systems. I will also describe advanced characterization techniques including synchrotron-based, strain-sensitive x-ray imaging to measure the local lattice strain within diamond and SiC. Combining these techniques with localized defect creation and other advanced defect imaging techniques provides a direct means to understand the local crystal environment surrounding the defects and offers a pathway for improving the defect-based quantum technologies.