Grainger College of Engineering, All Events

Heterogeneous integration (HI) has emerged as a key strategy for advancing next-generation power electronics by enabling the combination of dissimilar material systems into a single platform. Among various HI approaches, the incorporation of two-dimensional (2D) materials offers a unique advantage due to their van der Waals (vdW) bonding, which facilitates the clean release of epitaxial layers. In this work, we present a comprehensive approach to HI that integrates the growth of ultra-thin 2D materials with high-quality epitaxial Ga2O3 wide band-gap semiconductors. Freestanding epitaxial membranes are realized via a Ni stressor-induced exfoliation process, followed by their integration onto foreign substrates using metal bonding techniques. This methodology enables the transfer of active layers onto substrates with superior thermal conductivity, providing an effective pathway to mitigate self-heating and enhance device performance.