A material with a bandgap higher than 2 eV were often categorized as an insulator The relentless pursuit of light-emitting diodes (LEDs) in the past 7 decades, especially the high-efficiency visible LEDs, leads to development of the extremely pure semiconductor with a bandgap ranging from 2 eV to 6 eV to date. To fully unleash the potential of a semiconductor, it is critical to 1) control its defect levels below the limits that the targeted applications can tolerate, 2) control its doping in both n-type and p-type, and 3) engineer the most effective carrier injection into the conduction and valence bands, i.e. excellent ohmic contacts. A DUV emitter is an epitome of devices where these requirements need to be met. Even for an application that can be successful in engineering only one band of the semiconductor, availability of adequate control of the other band expands the design and operation space of the device tremendously. I will discuss advances in fundamental science and technology development in wide bandgap semiconductors.
Huili Grace Xing is currently the William L. Quackenbush Professor of Electrical and Computer Engineering, Materials Science and Engineering at Cornell University, having recently served as the Associate Dean for Research & Graduate Studies of the College of Engineering. She is a recipient of the AFOSR Young Investigator Award, NSF CAREER Award, ISCS Young Scientist Award, and the Intel Outstanding Researcher Award. She is a fellow of APS, IEEE & AAAS. She received B.S. in physics from Peking University (1996), M.S. in Material Science from Lehigh University (1998) and Ph.D. in Electrical Engineering from University of California, Santa Barbara (2003), respectively. She was a faculty with the University of Notre Dame from 2004 to 2014. Her research focuses on development of III-V nitrides, 2-D crystals, oxide semiconductors, recently multiferroics & magnetic materials: growth, electronic and optoelectronic devices, especially the interplay between material properties and device development for high performance devices, including RF/THz devices, tunnel field effect transistors, power electronics, DUV emitters and memories. Together with her colleague Debdeep Jena, they were the first to demonstrate distributed polarization doping (DPD), especially the p-type DPD. This doping scheme is fundamentally different from impurity doping and modulation doping, thus dubbed as the 3rd generation of doping science. Polarization doping is particularly powerful in polar ultrawide bandgap semiconductors since it might be the only known method to achieve both n-type and p-type in an UWBG semiconductor with doping properties akin to shallow impurity dopants.She has delivered 200+ invited talks and seminars, and has authored/co-authored 300+ journal papers including Nature journals, Physical Review Letters, Applied Physics Letters, Electron Device Letters, and 120+ conference proceeding publications in IEDM, ISPSD etc. Her h-index is 74 on google scholar.