New (Ultra)wide Bandgap III-Nitride Semiconductors: Epitaxy, Properties, and Emerging Applications
Prof. Zetian Mi,
Department of Electrical Engineering and Computer Science
University of Michigan, Ann Arbor
Abstract: The incorporation of IIIB and rare-earth elements, such as scandium (Sc), can transform, conventional III-nitride semiconductors to be ferroelectric, with significantly enhanced electrical, piezoelectric, photocatalytic, and quantum properties. These unique characteristics, together with its ultra-wide bandgap, ferroelectric functionality, and seamless integration with III-N technology, promises a wide range of future applications, including high-power and high-frequency electronics, UV optoelectronics, acoustic resonators and filters, micro-electromechanical systems (MEMs), memory electronics, neuromorphic computing, and integrated quantum photonics, to name just a few. In this talk, I will describe the recent advances of such novel III-nitride semiconductors, including their epitaxy and nanoscale and quantum engineering, and emerging applications in optoelectronics, quantum photonics, memory electronics, and artificial photosynthesis.
Biography: Zetian Mi is a Professor in the Department of Electrical Engineering and Computer Science at the University of Michigan, Ann Arbor. His teaching and research interests are in the areas of low dimensional semiconductors and their applications in electronic, photonic, clean energy, and quantum devices and systems. Prof. Mi is a Fellow of IEEE, Optica, and SPIE, and a recipient of the Science and Engineering Award from W. M. Keck Foundation, David E. Liddle Research Excellence Award, IEEE Photonics Society Distinguished Lecturer Award, and ISCS Young Scientist Award. Prof. Mi currently serves as the Editor-in-Chief of Progress in Quantum Electronics, Serial Editor of Semiconductors and Semimetals, and Vice President for Conferences of IEEE Photonics Society. He is a co-founder of NS Nanotech Inc. and NX Fuels Inc.