Abstract:
Beta- Gallium Oxide is an emerging ultra-wide band gap (UWBG) material with the availability of high quality native substrates grown using potentially inexpensive melt-based techniques. In this talk, I will highlight the tremendous progress made by the Gallium Oxide research community in the last few years, in the areas of epitaxy and lateral/vertical device demonstrations. I will discuss low pressure chemical vapor deposition growth of Ga2O3 with silicon and germanium n-type doping using solid source dopants and very high growth rates, relevant for vertical power device structures. In particular, I will focus on our group’s first demonstration of delta doping and modulation-doped Aluminum Gallium Oxide/ Gallium Oxide heterostructures grown using metal organic vapor-phase epitaxy towards achieving high mobility Gallium Oxide channels for high frequency device applications.
Speaker Biography
Sriram Krishnamoorthy joined the Department of Electrical and Computer Engineering at the University of Utah as an Assistant Professor in 2017. He received his bachelor’s degree in physics and electrical engineering from Birla Institute of Technology and Science, Pilani, India. He received his PhD degree and continued with his postdoctoral research at The Ohio State University, where he received the OSU presidential fellowship. His research interests include wide band gap materials epitaxy, electronic/optoelectronic devices for high frequency and power electronic applications. He has published 56 journal publications and over 100 conference papers, including several key publications in the areas of III-Nitride tunnel junctions for visible and UV emitters, and ultra-wide band gap Gallium Oxide devices and materials.
