Abstract
Epitaxy researchers attempt novel materials combination and technique to overcome something considered to be impossible, limited by materials compatibility. Group-IV semiconductors, such as silicon (Si) and germanium (Ge), is the world’s best studied material system for epitaxy due to their importance in semiconductor industry. However, advances in nanoscience and emerging materials research have revealed that Si-Ge epitaxy has plenty of room for study. In this presentation size-dependent growth behaviors of Si at mesoscale, radial heteroepitaxy of Si/Ge nanowire heterostructure and unique defect formation resulting in change of battery performances, van der Waals heterostructures composed of crystalline Ge(Si) and emerging two-dimensional materials and their physical characteristics will be discussed. An individual subtopic includes nucleation strategy, kinetic controls, and insights for applications, such as photovoltaics, electrical energy storage, and electronic devices. Novel observations of hybrid structures composed of two-dimensional materials (e.g. graphene, h-BN, transition metal dichalcogenides) and conventional semiconductors (Si, Ge, wide band gap semiconductors) will be also presented.
About the Speaker
Jinkyoung Yoo is the co-leader of Quantum Materials Systems thrust of The Center for Integrated Nanotechnologies (CINT), a National Nanoscience Research Center supported by U.S. Department of Energy, in Los Alamos National Laboratory. Jinkyoung received his Ph. D. (Materials Science) from the Pohang University of Science and Technology (POSTECH) in South Korea. He worked at CINT as a post-doctoral researcher from 2010 to 2013. He then joined CINT as a technical staff member in 2013. His research encompasses synthesis of semiconductor nanowire heterostructures, 2D/3D heterostructures, electrical/optical characterizations, and device fabrication to integrate fundamental understandings of nanoscience into applicable devices.
Host: Professor SungWoo Nam
