Engineering Noise-Free Color Center Defects in Silicon Carbide
Abstract: Defects in semiconductors have the potential to be robust quantum bits. Unfortunately, this potential is throttled by undesired charge traps and crystalline disorder close to the qubit. These surrounding noise sources arise from both surface states and damage created during the qubit formation process. In this presentation, I will discuss several approaches for mitigating noise from these various sources.
First, I will discuss the surface passivation schemes borrowed from traditional semiconductor manufacturing. Next, I will present results from Monte-Carlo simulations of radiation damage, where we uncover a pathway to create defect qubits while minimizing unwanted damage. Last, I will discuss our vision for integrating defects into optical waveguides within a P-I-N structure to mitigate charge noise.
Together, these approaches aim to create a pathway for noise-free quantum defects in silicon carbide that will enable a wide range of quantum technologies, such as precise magnetometers and the distribution of quantum entanglement over long distances.
Bio: Anastasiya Osher a first-year graduate student working in Professor Chris Anderson's group on color center defects in silicon carbide.