INVITED SEMINAR, JAN. 12TH (FRIDAY), 11 AM IN HMNTL 1000.
Gallium Nitride Electronics: Demonstrated Success and Uncharted Potential
Abstract: While silicon continues to reign as the dominant semiconductor in today's electronics landscape, Gallium Nitride (GaN) has achieved remarkable commercial success across various sectors, including lighting, microwave electronics, and power electronics. Nevertheless, the full potential of GaN electronics may transcend current accomplishments, positioning it as the pivotal semiconductor technology for our electrified future. This seminar will delve into the ongoing research endeavors at Penn State, with a focus on GaN super-heterojunction devices and integration. Our objective is to propel GaN electronics to new heights in terms of power, speed, and harsh environment survivability.
Biography: Rongming Chu is a Professor of Electrical Engineering at the Pennsylvania State University. He earned his Ph.D. in 2008 from UC-Santa Barbara, specializing in GaN microwave transistors. From 2008 to 2010, he spent two years at Transphorm Inc., contributing to the conception and implementation of the company's first GaN power switch prototype. From 2010 to 2018, Rongming Chu served as a Senior Research Staff member at HRL Laboratories LLC, leading GaN power electronics R&D.
Rongming has over 50 issued US patents and more than 70 publications on GaN materials, devices, and circuits, with many of his inventions transitioning into commercial applications. He holds senior memberships in both the Institute of Electrical and Electronics Engineers (IEEE) and the National Academy of Inventors. Rongming is a recipient of the IEEE Electron Devices Technology and Manufacturing Best Paper Award (1st place), the HRL's Distinguished Inventor Award, and the IEEE Electron Device Society George E. Smith Award.
